Overview

Substrate Material:

Aluminum oxide, aluminum nitride, beryllium oxide, diamond, quartz glass, sapphire, ferrite, high K ceramics, etc.

Layout:

1~6 inches square or round

Thickness:

0.1~2mm

Metals

Sputtering: Ti, TiW, TaN, Au, NiCr, Cu, Ni, Cr, Pt

Plating: Cu, Ni, Au

Evaporation: AuSn, Pt

Conductor

Line width/distance: recommended >20μm, limit 10μm

Accuracy: standard ±5μm, limit ±3μm

Thin-film integrated circuit (TIC)

Specifications

Suitable for producing high-density, compact, and high-performance passive circuits using precision processes such as sputtering, vapor deposition, and photolithography.

Typical products include precision resistors, chip capacitors, filters, voltage dividers, bridges, and ferrite microstrip circuits for high frequency microwave and optical communications.

They are widely used in fields such as high-frequency microwave, optical communications, automotive electronics, and medical electronics.

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